Chen Xingbi was born in Shanghai on January 28th, 1931. His ancestral home is Pujiang, Zhejiang. He studied in the Department of Electrical Engineering of Tongji University from 1947 to 1952, and worked in Xiamen University, Southeast University and Chengdu Institute of Telecommunications Engineering (now University of Electronic Science and Technology of China) successively. In 1999, he was elected as an academician of China Academy of Sciences, and in 2019, he was elected as an IEEELife Fellow of the International Institute of Electrical and Electronics Engineers.
Chen Xingbi is a leader and master in the field of power semiconductors in China. He has published more than 200 academic papers and obtained more than 40 patents from China and the United States. He is the first scientist in the world to put forward the theory of super-junction voltage withstand layer. His patent for super-junction invention breaks the traditional "silicon limit" and is praised as "a new milestone of high-voltage power devices" by international academic circles. The invention patent was successfully transferred and industrialized. At present, the global annual market sales of superjunction devices exceed 1 billion US dollars.
Chen Xingbi has won many honors, including 2 national invention awards and scientific and technological progress awards in China, and 13 provincial and ministerial awards. In 2015, Chen Xingbi won the highest honor "International Power Semiconductor Pioneer Award" awarded by IEEE ISPSD, becoming the first scientist in the Asia-Pacific region to receive this honor. Chen Xingbi was elected to the first Hall of Fame of IEEE ISPSD in 2018, becoming the first Chinese scientist to be elected to the Hall of Fame. (End)